Littelfuse: SiC MOSFET provides ultra-fast switching in power electronics

Littelfuse introduced its first series of silicon carbide MOSFETs, the latest addition to the company’s growing power semiconductor line. The LSIC1MO120E0080 Series, with a voltage rating of 1200V and ultra-low (80mΩ) on-resistance, is the first organically designed, developed, and manufactured SiC MOSFETs to be released by this partnership. This device is optimized for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds that’s unavailable with traditional power transistor solutions.

When compared with silicon devices that have the same rating, the SiC MOSFET Series enables substantially greater energy efficiency, reduced system size/weight, and increased power density in power electronics systems. It also offers superior robustness and exceptional performance, even at high operating temperatures (150°C). Typical applications for these new SiC MOSFETs include power conversion systems such as solar inverters, switch mode power supplies, UPS systems, motor drives, high voltage DC/DC converters, battery chargers and induction heating. The LSIC1MO120E0080 Series SiC MOSFET is available in TO-247-3L packaging and provided in tubes in quantities of 450.

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